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魅麗。花火原創小說66折起

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原文書 (12)

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2022~2023 (2)
2018~2019 (3)
2016~2017 (1)
2016年以前 (7)

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精裝 (10)

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B. Jayant Baliga (12)
B. Jayant Baliga (EDT) (1)

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World Scientific Pub Co Inc (5)
Springer Verlag (3)
Elsevier (1)
Elsevier Science Health Science div (1)
Springer Nature (1)
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Woodhead Pub Ltd (1)

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13筆商品,1/1頁
Advanced Power MOSFET Concepts

1.Advanced Power MOSFET Concepts

作者:B. Jayant Baliga  出版社:Springer Verlag  出版日:2010/08/30 裝訂:精裝
Advanced Power MOSFET Concepts provides an in-depth treatment of the physics of operation of innovative power MOSFET device structures. Devices capable of operating over a broad range of voltages from
若需訂購本書,請電洽客服
02-25006600[分機130、131]。
Advanced High Voltage Power Device Concepts

2.Advanced High Voltage Power Device Concepts

作者:B. Jayant Baliga  出版社:Springer Verlag  出版日:2011/09/20 裝訂:精裝
The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electr
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02-25006600[分機130、131]。
Silicon Rf Power Mosfets

3.Silicon Rf Power Mosfets

作者:B. Jayant Baliga  出版社:World Scientific Pub Co Inc  出版日:2005/03/01 裝訂:精裝
The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using
絕版無法訂購
Silicon Carbide Power Devices

4.Silicon Carbide Power Devices

作者:B. Jayant Baliga  出版社:World Scientific Pub Co Inc  出版日:2006/03/30 裝訂:精裝
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulti
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02-25006600[分機130、131]。
Advanced Power Rectifer Concepts

5.Advanced Power Rectifer Concepts

作者:B. Jayant Baliga  出版社:Springer Verlag  出版日:2009/05/15 裝訂:精裝
During the last decade, many new concepts have been proposed for improving the performance of power rectifiers and transistors. The results of this research are dispersed in the technical literature a
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02-25006600[分機130、131]。
Silicon Carbide Power Devices
滿額折

6.Silicon Carbide Power Devices

作者:B. Jayant Baliga  出版社:World Scientific Pub Co Inc  出版日:2006/01/06 裝訂:平裝
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulti
定價:3604 元, 優惠價:1 3604
無庫存,下單後進貨(到貨天數約30-45天)
Fundamentals of Power Semiconductor Devices

7.Fundamentals of Power Semiconductor Devices

作者:B. Jayant Baliga  出版社:Springer Nature  出版日:2018/10/12 裝訂:精裝
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytic
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02-25006600[分機130、131]。
Gallium Nitride and Silicon Carbide Power Devices
滿額折

8.Gallium Nitride and Silicon Carbide Power Devices

作者:B. Jayant Baliga  出版社:World Scientific Pub Co Inc  出版日:2017/03/15 裝訂:精裝
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enh
定價:4352 元, 優惠價:9 3917
無庫存,下單後進貨(採購期約4~10個工作天)
The Igbt Device ─ Physics, Design and Applications of the Insulated Gate Bipolar Transistor

9.The Igbt Device ─ Physics, Design and Applications of the Insulated Gate Bipolar Transistor

作者:B. Jayant Baliga  出版社:Elsevier Science Health Science div  出版日:2015/03/18 裝訂:精裝
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), ele
若需訂購本書,請電洽客服
02-25006600[分機130、131]。
Fundamentals of Power Semiconductor Devices

10.Fundamentals of Power Semiconductor Devices

作者:B. Jayant Baliga  出版社:Springer Nature Switzerland AG  出版日:2019/02/14 裝訂:平裝
若需訂購本書,請電洽客服
02-25006600[分機130、131]。
Modern Silicon Carbide Power Devices

11.Modern Silicon Carbide Power Devices

作者:B. Jayant Baliga  出版社:World Scientific Pub Co Inc  出版日:2023/10/28 裝訂:精裝
若需訂購本書,請電洽客服
02-25006600[分機130、131]。
The Igbt Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor

12.The Igbt Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor

作者:B. Jayant Baliga  出版社:Elsevier  出版日:2023/01/20 裝訂:精裝
若需訂購本書,請電洽客服
02-25006600[分機130、131]。
Wide Bandgap Semiconductor Power Devices ― Materials, Physics, Design, and Applications

13.Wide Bandgap Semiconductor Power Devices ― Materials, Physics, Design, and Applications

作者:B. Jayant Baliga (EDT)  出版社:Woodhead Pub Ltd  出版日:2018/10/26 裝訂:平裝
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applicationsAddresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and
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02-25006600[分機130、131]。

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