Handbook of Gan Semiconductor Materials and Devices

Gallium nitride (GaN) is a III/V direct bandgap semiconductor used in lighting and display, as well as data storage, air and water purification, medical treatment, missile warning systems, power amplifiers, and switches. This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices.

Wayne Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. He earned his PhD in Applied Physics from the University of California, San Diego. He has worked in industry for over two decades including at Hewlett-Packard Laboratory, Agilent Technologies Laboratory, and Philips Lumileds, developing cutting-edge optoelectronic and photonic materials and device structures by molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) with their applications to optoelectronic and electronic devices. Previously he was chief engineer and Vice President of Najing Technology / NNCrystal. Dr. Bi has authored or co-authored over 60 refereed journal publications, and has presented numerous conference talks and is the inventor of twenty patents. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, ROC. He earned his doctorate in the Department of Electrical and Computer Engineering at the University of Illinois at Champaign Urbana. He has supervised over forty PhD and Master’s level scientists and engineers and also has extensive industry experience, including at Bell Labs, Lucent Technologies, Agilent Technologies, and LuxNet Corporation. He has worked in the field of III-V optical devices and materials, solid state lighting process development, and fabrication and measurement of quantum devices. He is an associate editor of the IEEE Journal of Selected Topics in Quantum Electronics and Journal of Lightwave Technology. He has published over 300 papers in peer-reviewed journals, and is an elected fellow of SPIE, the Optical Society of America (OSA), and The Institution of Engineering and Technology (IET). Peter J. Parbrook is the Stokes Professor of Nitride Materials and Devices in the School of Engineering, University College Cork, and Tyndall National Institute. He was awarded a first class honors degree in Physics from the University of Strathclyde, Scotland. His Ph.D. there was on the study of the growth and characterization of wide-bandgap II-VI semiconductors. He earned a Toshiba Fellowship and worked at the Toshiba Central Research and Development Center in Japan before being appointed to the University of Sheffield as a lecturer. He is the author / co-author of more than 150 publications in international journals and several patents. He is a member of the International Advisory Committee for the International Workshop on Nitride Semiconductors conference series. In 2011 he was co-chair of the International Conference on Nitride Semiconductors (ICNS) held in Glasgow, Scotland.