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【簡體曬書區】 單本79折,5本7折,活動好評延長至5/31,趕緊把握這一波!
Chemical-Mechanical Polishing 2001 – Advances and Future Challenges:VOLUME671
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Chemical-Mechanical Polishing 2001 – Advances and Future Challenges:VOLUME671

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Papers from an April 2001 symposium describe recent advances in the practice of chemical-mechanical polishing (CMP) and in modeling the interactions that occur between the wafer surface and the pad and the slurry. Some topics addressed are oxide powders for CMP produced by chemical vapor synthesis, the effect of copper film surface properties on CMP removal rate, a contact-mechanics based model for dishing and erosion in CMP, and the effects of particle concentration in CMP. Other topics include control of pattern specific corrosion during aluminum CMP, direct visualization of particle dynamics in model CMP geometries, and mechanisms of post-CMP cleaning. Annotation c. Book News, Inc., Portland, OR (booknews.com)

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