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Silicon Carbide 2004 ― Materials, Processing and Devices:VOLUME815
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Silicon Carbide 2004 ― Materials, Processing and Devices:VOLUME815

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Papers from an April 2004 symposium reflect the current focus in the field on wide bandgap semiconductor silicon carbide for electronic device applications. Papers are presented in sections on bulk growth, epitaxial growth, extended defects and structural characterization, electrical and optical characterization, device processing, electronic devices, and sensors. Some specific subjects examined include growth and metrology of silicon oxides on silicon carbide, a robust process for ion implant annealing of SiC in a low-pressure silane ambient, SiC power diode improvement by fine surface polishing, and impact ionization coefficients of 4H-SiC. Annotation c2004 Book News, Inc., Portland, OR (booknews.com)

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