Characterization in Compound Semiconductor Processing

Based on the Dec. 1991 MRS meeting in Boston, Mass., explores the topics of gas-source epitaxial growth and characterization; dry etching and deposition; contacts and dielectrics; devices and interfac

Due to increased urgency for alternative energy sources, and because of significant advances in the understanding of materials and devices, thin-film photovoltaics are currently a topic of great importance and are leading candidates for providing affordable energy. This book offers the latest research, scale-up and commercialization advances in the field, focusing on a variety of different and novel materials classes for absorbers and contacts. There is a strong emphasis on future developments of thin-film solar cells, as well as materials issues in scaling up to gigawatt production levels. For the first time, thin-film compound semiconductor photovoltiacs are entering large-scale manufacture and this book reflects the enthusiasm of the materials research community to take on the challenges that this technology will likely see. Topics include: characterization of absorber materials; materials deposition and process monitoring; device modeling and characterization; new materials and dev

Advances in Semiconductor Nanostructures focuses on the physical aspects of semiconductor nanostructures. This includes growth and processing of semiconductor nanostructures by molecular-beam epitaxy,

Symposium held Nov.-Dec. 1988, Boston, MA. Organized into sections which broadly discuss the subjects of: bulk defects and their characterization; OMVPE growth and characterization; impurity effects i

Welcome to Semiconductor Device Fabrication Process! This is a nonfiction science book which contains various topics on semiconductor device fabrication process. The process of fabricating semiconductor devices, which are primarily integrated circuit (IC) chips like modern computer processors, microcontrollers, and memory chips like NAND flash and DRAM found in common electrical and electronic equipment, is known as semiconductor device manufacturing. Electronic circuits are gradually built on a wafer consisting of pure semiconducting material using a multi-step sequence of photolithographic and chemical processing techniques such as surface passivation, thermal oxidation, planar diffusion, and junction isolation. Although different compound semiconductors are utilized for specialized applications, silicon is virtually always employed. From commencement to packaged chips ready for distribution, the process requires at least six to eight weeks excluding the circuit design, and it is car

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at Na

Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.

To meet increasingly challenging and complex system requirements, as well as to stay cost effective, it is not enough to use one single semiconductor materials system. Major efforts have, therefore, been made to combine the low cost and well established Si-based CMOS processing attributes with the superior performance attributes of compound semiconductors (CS). Such a combination will enable performance superior to that achievable with either CS and CMOS alone, with CMOS affordability. The strong and increasing interest in GaN, GaAs, SiC and related alloys on silicon substrates indicates the worldwide importance of these materials and devices. This book represents the latest technical advancements and information on III-V materials and devices on silicon substrates from universities, national laboratories and industries worldwide. Topics include: GaN-based electronic devices and sensors on silicon; GaN-based optical devices on silicon; GaN and related alloys on silicon growth and integ

Lower dimensional structures, such as nanotubes and nanowires, have opened new frontiers in materials research. Recent advances in the synthesis, processing and characterization of these structures indicate that some of their enormous potential is slowly being realized. This book outlines the progress that has been made in the science and applications of elemental (e.g., C and Si) and compound (e.g., ZnO, InP and GaAs) nanotubes, wires and layers. The book emphasizes how far initial expectations have come and the work necessary to realize their future promise. Topics include: carbon nanotube growth mechanisms; solution-based processing and electrochemistry; carbon nanotube synthesis and characterization; nanowires - synthesis and characterization; carbon nanostructure processing; optical and thermal properties; nanowires and nanotubes - electrical, optical and thermal properties; mechanical properties; and mechanical properties and energy applications.

Defect engineering has come of age. That theme is well documented by both the academic and industrial research communities in this book from MRS. Going beyond defect control, the book explores the engineering of desired properties in semiconductor materials and devices through the deliberate introduction and manipulation of defects and impurities. Papers are grouped around ten distinct topics covering materials, processing and devices. Topics include: grown-in defects in bulk crystals; grown-in defects in thin films; gettering and related phenomena; hydrogen interaction with semiconductors; defect issues in widegap semiconductors; defect characterization; ion implantation and process-induced defects; defects in devices; interfaces, quantum wells and superlattices; and defect properties, reaction, activation and passivation.

Advances in the growth of novel-engineered structures such as sophisticated semiconductor superlattices and heterostructures, as well as new nonlinear optical materials, have opened exciting possibilities for infrared sources, detectors, modulators and novel devices. Brought to maturity, such discrete devices could likely see widespread use in applications as diverse as infrared imaging, chemical sensing, surveillance, short-link and high-bandwidth communications. This book published by MRS, brings together a group of internationally recognized experts in the field to discuss progress in materials, physics, processing and device design and performance. Developments in materials for cooled and uncooled infrared systems based on pyroelectric, micro-bolometric, photovoltaic and photoconductive detectors are emphasized. Progress in compact infrared sources is also highlighted. Topics include: antimonide-related materials - growth, characterization and analysis; antimonide-related devices;