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Advanced Device Modeling and Simulation

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出版日:2016/06/27 作者:Pablo Andr撱? Mu?透-rojas (EDT)  出版社:Springer Verlag  裝訂:精裝
This volume presents recent research work focused in the development of adequate theoretical and numerical formulations to describe the behavior of advanced engineering materials. Particular emphasis
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出版日:2006/01/02 作者:Mark S. Lundstrom; Jing Guo  出版社:Springer Verlag  裝訂:精裝
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nan
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出版日:2014/10/29 作者:Bernard Schroer (CON); Dietmar P. F. Moeller  出版社:Springer Verlag  裝訂:精裝
Far more than a mere introduction to the topic, this guide to inter- and multi-modal transportation systems analysis, modeling, and simulation extends to advanced mathematical principles and includes
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出版日:2017/12/22 作者:Tarek I. Zohdi  出版社:Springer Verlag  裝訂:平裝
Within the last decade, several industrialized countries have stressed the importance of advanced manufacturing to their economies. Many of these plans have highlighted the development of additive man
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出版日:2010/12/30 作者:Oleg Schilling  出版社:Springer Verlag  裝訂:平裝
These two volumes will provide a comprehensive overview of turbulence: theory, modeling, numerical simulation, and experimental results. They will include much material so far available only in techn
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This book provides a description of advanced multi-agent and artificial intelligence technologies for the modeling and simulation of complex systems, as well as an overview of the latest scientific ef
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出版日:2012/01/04 作者:Andreas Ochsner (EDT); Lucas F. M. Da Silva (EDT); Holm Altenbach (EDT)  出版社:Springer Verlag  裝訂:精裝
This volume highlights the latest developments and trends in advanced materials and their properties, the modeling and simulation of non-classical materials and structures, and new technologies for jo
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出版日:2011/06/22 作者:Dragica Vasileska (EDT); Stephen M. Goodnick (EDT)  出版社:Springer Verlag  裝訂:精裝
This book surveys the advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices. It systematically describes theoretical approaches and the numerical solutions that
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出版日:2010/11/24 出版社:Springer Verlag  裝訂:精裝
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modelin
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