Computational Semiconductor Materials Science

The symposium which gave rise to these proceedings addressed theoretical and computational aspects of simulating, modeling, optimizing, and designing semiconductor materials. The 18 papers cover defects in semiconductors; methods of calculating electronic structure; low-dimensional materials; semiconductor energy materials; magnetic semiconductors; phase-change materials, surfaces, and interfaces; and a variety of topics in the poster session. The invited papers discuss the electronic structure of O-vacancy in high-k dielectrics and oxide semiconductors; the electronic structure and optical absorption of fluorographene; structural, electronic, and defect properties of Cu2ZnSn(S,Se)4 alloys; and electronic excitation induced solid-state amorphization in Gd-Sb-Te alloy. Co-published with Cambridge University Press. Annotation c2012 Book News, Inc., Portland, OR (booknews.com)