商品簡介
Some 100 oral and poster papers from around the world cover new techniques for characterizing defects in electronic materials, process-induced defects, and defects in semiconductors of groups II-XIV. Among the specific topics are the inspection of recombination active defects for SiGe and solar cells, crystallographic analysis of flow pattern defects in dislocated Czochraiski silicon crystals, interstitial defect reactions, room-temperature electroluminescence from D 1 dislocation centers, and the coexistence of two carbon phases at grain boundaries in polycrystalline diamond. Annotation c. by Book News, Inc., Portland, Or.
