商品簡介
Proceedings of an April 2000 symposium, highlighting achievements and challenges in advanced interconnects and low-k dielectrics as employed in the microelectronics industry. Major themes are the replacement of Al alloys with Cu along with the introduction of new barrier materials to protect Cu from chemical attack, and the utilization of new dielectric materials with a lower relative dielectric constant k than SiO2 in multi-level metallization structures of increasing complexity. Topics include mechanical properties, interconnect reliability, porous materials, barrier and seed layer-deposition techniques, grain evolution of metals, and process integration and manufacturability. Oehrlein is affiliated with the University of Maryland. Annotation c. Book News, Inc., Portland, OR (booknews.com)
