商品簡介
Papers from a December 2002 symposium report on the latest research in high-k characterization, atomic layer deposition, gate metal materials and integration, contacts and ultra-shallow junction formation, theory and modeling, and crystalline oxides for gate dielectrics. Some specific topics include device engineering options, high-permittivity gate dielectrics, scanning transmission electron microscopy, methods to suppress unwanted charge found in high-k films, metal alloys and gate electrode issues, and nickel salicide formation. Annotation (c) Book News, Inc., Portland, OR (booknews.com)
