Designing Bipolar Transistor Radio Frequency Integrated Circuits

Until now, critical GaAs HBT and SiGe HBT process technologies have been largely neglected in reference books. This resource for engineers and circuit designers fills the gap. Sweet (electrical engineering, Santa Clara University) explains bipolar transistor radio frequency integrated circuit (RFIC) design, covering a wide range of circuit topologies that are optimized for maximum performance with HBT bipolar devices. The book discusses key architectures and applications such as Bluetooth, UWB, GPS, and WiMAX, describes fabrication technologies and amplifier design, and looks at performance trade-offs and production costs. Applications for RFICS, along with typical chip architectures for fulfilling the needs of these applications, are discussed. Both InGaP/GaAs HBT and SiGe HBT process technologies are presented. Several design techniques for passive circuits, including filters, couplers, and phase shifters, are presented. Amplifier design concepts are discussed, including specific approaches to the design of low-noise amplifiers, PAs, and wideband gain blocks. Other topics covered include mixer design, frequency multiplier design, and design of VCOs. Annotation c2008 Book News, Inc., Portland, OR (booknews.com)