Ionizing Radiation Effects in Electronics ─ From Memories to Imagers

This book provides a wide perspective on the effects of ionizing radiation in modern semiconductor devices, addressing a wide range of electronic devices and several environments of interest: terrestrial, space, and high-energy physics experiments. It introduces radiation effects and the underlying basic mechanisms. It provides real examples and case studies to assess radiation effects issues in a wide range of electronic devices.

Marta Bagatin received her Laurea degree (cum laude) in electronic engineering and her Ph.D in information science and technology, both from the University of Padova, Italy. She is currently a postdoctoral researcher in the Department of Information Engineering at the University of Padova. Her research concerns radiation and reliability effects on electronic devices, especially on nonvolatile semiconductor memories. Marta has authored/coauthored two book chapters and more than 90 journal and conference publications. She regularly serves on committees for events such as the Nuclear and Space Radiation Effects Conference and Radiation Effects on Components and Systems, and as a journal reviewer.

Simone Gerardin received his Laurea degree (cum laude) in electronics engineering and his Ph.D in electronics and telecommunications engineering, both from the University of Padova, Italy—where he is currently an assistant professor. His research concerns soft and hard errors induced by ionizing radiation in advanced CMOS technologies, and their interplay with device aging and ESD. Simone has authored/coauthored more than 150 journal papers and conference presentations, three book chapters, and three radiation effects conference tutorials. He is an associate editor for IEEE Transactions on Nuclear Science, a reviewer for several scientific journals, and a Radiation Effects Steering Group member-at-large.