滿額折
Ionizing Radiation Effects In Mos Devices And Circuits
商品資訊
ISBN13：9780471848936
出版社：John Wiley & Sons Inc
作者：Ma
出版日：1989/04/04
裝訂／頁數：精裝／608頁
定價
：NT$ 18648 元優惠價
：
90 折 16783 元
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商品簡介
作者簡介
目次
商品簡介
The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
作者簡介
T. P. Ma and Paul V. Dressendorfer are the authors of Ionizing Radiation Effects in MOS Devices and Circuits, published by Wiley.
目次
Historical Perspective (H. Hughes).
Electron-Hole Generation, Transport, and Trapping in SiO2 (F. McLean, et al.).
Radiation-Induced Interface Traps (P. Winokur).
Radiation Effects on MOS Devices and Circuits (P. Dressendorfer).
Radiation-Hardening Technology (P. Dressendorfer).
Process-Induced Radiation Effects (T. Ma).
Source Considerations and Testing Techniques (K. Kerris).
Transient-Ionization and Single-Event Phenomena (S. Kerns).
Index.
Electron-Hole Generation, Transport, and Trapping in SiO2 (F. McLean, et al.).
Radiation-Induced Interface Traps (P. Winokur).
Radiation Effects on MOS Devices and Circuits (P. Dressendorfer).
Radiation-Hardening Technology (P. Dressendorfer).
Process-Induced Radiation Effects (T. Ma).
Source Considerations and Testing Techniques (K. Kerris).
Transient-Ionization and Single-Event Phenomena (S. Kerns).
Index.
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