High-K Gate Dielectrics For Cmos Technology

In an effort to overcome limitations on the further miniaturization of complementary metal oxide semiconductor (CMOS) field-effect transistors, researchers have developed high dielectric constant (k) gate stacks that match the performance of conventional gate dielectrics based on silicon dioxide. Materials scientists and physicists review the problem, solutions to date, remaining challenges, and prospects. Their topics include the ultraviolet engineering of high-k thin films, structural and electrical characteristics of alternative high-k dielectrics for CMOS applications, interfacial dipole effects on high-k gate stacks, high-k dielectrics in ferroelectric gate field effect transistors for nonvolatile memory applications, and the interaction challenges with novel materials in developing high-performance and low-leakage high-k/metal gate CMOS transistors. Annotation c2012 Book News, Inc., Portland, OR (booknews.com)

Gang He is Professor at the School of Physics and Materials Science of the Anhui University, China. He obtained his academic degrees from the Institute of Solid State Physics of the Chinese Academy of Sciences. His research interests and efforts cover the areas of the preparation, characterization, fundamental understanding and associated applications of high-k gate dielectric thin films. Due to his outstanding performance in research work, he won a scholarship award from the Chinese Academy of Sciences in 2005 and a grant of the Japanese Society for the Promotion of Science in 2006.

Zhaoqi Sun is the President of the School of Physics and Materials Science at the Anhui University. He graduated from Sichuan University and obtained his academic degrees from the University of Science and Technology of China. His research is focused on functional thin film materials for applications in microelectronics. Zhaoqi Sun has authored more than 140 scientific publications and has received numerous scientific awards, including the Science and Technology Award of the Anhui Province and an Outstanding Teacher Award.