商品簡介
Industry experts provide an overview of the mature topic of oxide reliability, which concerns bias-temperature stability, uniformity, interface properties, leakage currents, endurance, and the use of ever-thinner oxides. Dumin (Clemson U.) edits five in-depth chapters from international authors covering oxide wear-out and breakdown; oxide degradation mechanisms as they apply to cell programming, cell erasing, and data retention; how knowledge of physics of the Si-O-Si system can be used to understand field acceleration parameters of oxide breakdown; statistical and physical modeling, and relationships between soft and hard breakdown; and an anode hole injection model. Annotation (c) Book News, Inc., Portland, OR (booknews.com)
