商品簡介
Proceedings of the April 1998 symposium, the second in a series devoted to understanding the physical phenomena governing front-end processing of silicon integrated circuits and devices. Strongly based on the previous session, which focused on defects and diffusion in silicon processing, but also encompasses plasma processing, nitridation of gate oxide, and other issues. Topics include ultra-shallow junction formation, transient enhanced diffusion, defect properties, physical models for the evolution of dopant-defect clusters, and advanced process modeling by continuum and Monte Carlo techniques. Annotation c. by Book News, Inc., Portland, Or.
