商品簡介
Papers from a December 2002 symposium reflect recent nitride-related advances, from basic material physics to high performance devices. Areas discussed include devices and defect reduction, defects and characterization, nonpolar orientations, optical properties, UV emitters and detectors, and visible light detectors. Developments are reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties, as well as nitride-based electronic devices with new heterostructure FET designs for RF power. Annotation (c) Book News, Inc., Portland, OR (booknews.com)
