商品簡介
A snapshot of the current understanding of ion implantation, diffusion, gettering, and other challenging phenomena of importance to processing silicon devices. The 80 or so papers highlight such aspects the development of reliable, predictive, and quantitative simulation tools; new experimental and theoretical insights on cluster formation and dissolution in ion-implanted crystalline silicon; techniques such as deep-level transient spectroscopy, scanning tunneling microscopy, and x-ray scattering to monitor defect evolution; and the potential of low-energy ion implantation to provide the shallow junctions needed for the next ULSI generation of devices. Annotation c. by Book News, Inc., Portland, Or.
