Fundamentals Of Silicon Carbide Technology: Growth, Characterization, Devices, And Applications

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications

Based on a number of breakthroughs in SiC growth and technologies done in the 1980s and 1990s, the world-first Schottky barrier diodes (SBDs) were released as commercial products in 2001. Since then the SiC SBD market has grown remarkably and the diodes have been implemented into a variety of power supplies, including motor control and air conditioners. In this wide-ranging book, the authors draw on their considerable experience in this field to present an introduction to SiC applications, as well as providing a useful reference for those already working in this fast-moving technology. Fundamentals of Silicon Carbide Technology introduces the basic properties of SiC materials as well as the fundamental technologies of SiC devices. The main topics include the physical properties, bulk and epitaxial growth, characterization of electrical and optical properties, extended and point defects, device processing, design and fabrication of devices, and applications of SiC devices.

• A complete introduction to the fundamental aspects of silicon carbide (SiC) materials science, processes, devices and power systems
• Covers applications such as power supplies, motor control, photovoltaic converters, high-voltage converters/inverters, radar, wireless communication, high-temperature electronics and sensors
• The proliferation of SiC power devices will contribute to less environmental pollution and the conservation of fossil fuels through its energy saving properties
• Fully illustrated throughout, and written by acknowledged experts with over 20 years’ experience in SiC research

Ideal for Graduate students and researchers in semiconductor devices, sensor design, high temperature electronics and power electronics, electronic material properties, and crystal growth.

Tsunenobu Kimoto, Department of Electronic Science and Engineering, Kyoto University, Japan.
Professor Kimoto has been involved in SiC research for more than 20 years and his research activity in this field covers growth, optical and electrical characterization, device processing, device design and fabrication. He has published more than 300 papers in international journals and has presented more than 50 invited talks at international conferences. He was a guest editor of the 2008 SiC special issues of IEEE Transactions on Electron Devices.

James A Cooper, School of Electrical and Computer Engineering, Purdue University, Indiana, USA
Professor Cooper was a member of technical staff at Bell Laboratories for ten years where he was principal designer of AT&T’s first microprocessor and investigated nonlinear transport in silicon inversion layers. His research at Purdue has centered on semiconductor device physics and characterization, focusing primarily on III-V materials and silicon carbide. He has co-authored over 250 technical papers and conference presentations.