商品簡介
The rationale for the volume is that accurate modeling of nanoscale electron devices is essential both for their technological and optimization and for their use in circuit design and, depending on the applications, different levels of modeling have to be used. Electronic engineers describe different modeling levels for different nanoscale metal-oxide semiconductor structures, looking at different levels of electrostatics and transport modeling and the relationships between them. They cover the Monte-Carlo simulation of ultra-thin film silicon-on-insulator metal-oxide-semiconductor field-effect-transistor (MOSFETs), analytical models and the electrical characterization of advanced MOSFETs, the physics-based analytical modeling of nanoscale multigate MOSFETs, and the compact modeling of double and tri-gate MOSFETs. Annotation c2016 Ringgold, Inc., Portland, OR (protoview.com)
