Heterojunction Bipolar Transistors for Circuit Design ─ Microwave Modeling and Parameter Extraction

A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors

‧ Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs
‧ Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning
‧ Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design
‧ Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

Jianjun Gao, Professor, School of information Science and Technology, East China Normal University, Shanghai, P.R.China
Jianjun Gao received his Ph.D. from Tsinghua University, in 1999. In 2003, he joined the Institute for High-Frequency and Semiconductor System Technologies, Berlin University of Technology, Germany, as a research associate working on the InP HBT modeling and circuit design for high speed optical communication. In 2004, he joined the Electronics Engineering Department, Carleton University, Canada, as Post-doctoral Fellow working on the semiconductor neural network modeling technique. Since 2007, he has been at East China Normal University, Shanghai. His main areas of research are characterization, modeling and wafer measurement of microwave semiconductor devices, optoelectronics devices and high-speed integrated circuits for radio frequency and optical communication.