Advances and Challenges in Chemical Mechanical Planarization：VOLUME991

Forty-one papers from the April 2007 symposium present recent research on the chemical mechanical planarization (CMP) process for polishing silicon wafers. Invited papers describe slurry particle characterization methods, summarize asperity-scale experiments on contact hydrodynamics, and identify research directions for commercial node 45 nm device development. Other topics include nanoscale characterization of surface defects by scanning probe microscopy and laser light scattering, numerical simulation of pad stain formation during copper CMP, the influence of post-CMP cleaning on copper surfaces, and low-defect ceria slurry for inter-layer dielectric CMP. Annotation c2008 Book News, Inc., Portland, OR (booknews.com)