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III-V Integrated Circuit Fabrication Technology
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III-V Integrated Circuit Fabrication Technology

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:NT$ 7150 元
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906435
若需訂購本書,請電洽客服 02-25006600[分機130、131]。
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商品簡介

This book covers semiconductor material basics, physics of devices used in semiconductor integrated circuit processing, and all the processing technologies used in III–V semiconductor fabrication. The content is chosen according to the needs of students as seen by a teacher and needs of practicing engineers dealing with processing issues as seen by an experienced process engineer. The book covers all aspects of the current state of the art of III–V processing with emphasis on heterojunction bipolar transistors, the volume leader technology, having grown due to the explosive growth of wireless technology.

Its primary purpose is to discuss processing. Only necessary equations are derived and device behavior is discussed for the purpose of understanding device figures of merit and electrical parameters that engineers need to understand and control. All aspects of processing of active and passive devices from crystal growth to back side processing, including lithography, etching, and film deposition, are covered. New material systems based on GaN are taking a larger role on the development side. Although the etching chemistries, deposition materials, and the temperature regimes are different, similar principles apply. The text covers the most promising structures of these material systems and devices.

作者簡介

Shiban Tiku has practically grown up with the GaAs industry. He started work in GaAs ICs at Texas Instruments, Dallas. He has been with Rockwell Semiconductor division, from which Skyworks was spun off, for over 20 years, first in process development and then in process engineering and yield engineering covering areas of design, layout, wafer fabrication, and back end processing. His work has contributed to Skyworks’ success as a leading company in GaAs IC and module shipments. Over the years, he has worked on epi growth, ion implantation, thin-film deposition, processing of field-effect transistor (FET)- and heterojunction bipolar transistor (HBT)-type devices, piezoelectric devices, flat panel displays, etc. Tiku is currently in charge of new process/product introduction at Skyworks, Newbury Park, California. He has served on CS MANTECH technical committee for over 10 years and is now on the executive committee as university liaison. He has published numerous papers and is the author or co-author of 15 patents. He enjoys training new engineers and loves hiking, tennis, and gardening.

Dhrubes Biswas is professor of electronics and engineering entrepreneurship at the Indian Institute of Technology Kharagpur, India. He has previously managed numerous semiconductor IC fabrication facilities and processes at Anadigics, Skyworks Solutions Inc., M/A-COM, and EG&G and made fundamental contributions in first PHEMT-based switch ICs, first 6? GaAs fab, and first 6? InGaP HBT and InGaP/InGaAs PHEMT-based power amplifier MMICs for cellular/WLAN. He has championed advanced research in "beyond Moore’s" electronic and optical devices in metamorphic HEMT/ HBT, and SiGe devices at the IIT in compound semiconductors, primarily in the integration of III–V electronics/optical front-end devices epitaxially on silicon for high-performance systems. Prof. Biswas has graduated several PhD and master’s students, authored more than 170 technical papers and books, and holds patents.

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優惠價:90 6435
若需訂購本書,請電洽客服 02-25006600[分機130、131]。

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