Sic Power Module Design: Performance, Robustness and Reliability
商品資訊
ISBN13：9781785619076
出版社：INSTITUTION OF ENGINEERING & T
出版日：2021/09/26
裝訂：精裝
商品簡介
Power semiconductor switching devices are at the core of power electronics converters. Conventional silicon (Si) technology has physical limits that are becoming a barrier to higher performance. Wide Bandgap (WBG) semiconductor devices offer higher efficiency, smaller size, lighter weight, and/or longer lifetime. This book describes novel wide-band-gap (WBG) semiconductors, specifically silicon carbide (SiC) power MOSFETs and diodes. It covers the design and assembly of SiC power modules, performance, robustness and reliability, and a number of practical case-studies, and serves as reference for prototyping methodologies and tools.
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